Symposium H of the IUMRS International Conference in AsiaYAMADA, Isao; KAWAI, Tomoji.Materials chemistry and physics. 1998, Vol 54, Num 1-3, issn 0254-0584, 383 p.Conference Proceedings

Controlling the diffusion of implanted boron in Si and silicide by multiple implantsCHU, C.-H; HO, K.-J; HUANG, C.-T et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 60-66, issn 0254-0584Conference Paper

Etching fabrication of silicon nanostructures using deposited metal clusters as formation nucleiKANAYAMA, T; TADA, T.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 238-243, issn 0254-0584Conference Paper

Free electron laser synthesis of microfiber silicon and its visible light emissionMAEDA, Y; HAYASHI, Y; AWAZU, K et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 164-168, issn 0254-0584Conference Paper

Indium oxide film formation by O₂ cluster ion-assisted depositionWEI QIN; HOWSON, R. P; AKIZUKI, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 258-261, issn 0254-0584Conference Paper

Laser cleaning of micro-particles from a solid surface: theory and applicationsLU, Y.-F; SONG, W.-D; LOW, T.-S et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 181-185, issn 0254-0584Conference Paper

Nitrogen ion implantation into three-dimensional substrates by plasma source ion implantationBABA, K; HATADA, R.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 135-138, issn 0254-0584Conference Paper

Optical response of LaCaMnO thin film prepared by pulsed laser depositionYOTSUYA, T; KUSAKA, T; KAKEHI, Y et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 169-172, issn 0254-0584Conference Paper

Visible photoluminescence in thermally annealed Bi implanted SiO₂ filmsKOMATSU, M; OYOSHI, K; HISHITA, S et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 286-288, issn 0254-0584Conference Paper

A consideration for electrical activation of carbon implanted into gallium arsenideYOKOTA, K; EMI, N; SAKAGUCHI, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 84-87, issn 0254-0584Conference Paper

A fundamental study of excimer laser ablation using experimental and MD simulation methodHORIUCHI, K; ISHIYAMA, M; HASEBE, T et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 201-204, issn 0254-0584Conference Paper

Application of non-mass analyzed ion implanter to sub-quarter micron MOSFETsKAWASAKI, Y; MURAKAMI, T; KUROI, T et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 17-22, issn 0254-0584Conference Paper

Characterization of TiN films alternately treated with PVD and Cr ion implantationODA, K; OHARA, H; TSUJIOKA, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 266-269, issn 0254-0584Conference Paper

Effect of sputtering-cleaning on adhesion of the metallic films to polymer substratesFUJINAMI, Y; HAYASHI, H; EBE, A et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 102-105, issn 0254-0584Conference Paper

Erbium implantation in silicon: from materials properties to light emitting devicesPRIOLO, F; FRANZO, G; COFFA, S et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 273-279, issn 0254-0584Conference Paper

Formation of Fe₁₆N₂ in iron sheet by an ion implantation methodTSUBAKINO, H; ANDO, M; YAMAMOTO, A et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 301-304, issn 0254-0584Conference Paper

High-energy co-implantation of Ti and O ions into sapphireNAKAO, S; IKEYAMA, M; TAZAWA, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 342-345, issn 0254-0584Conference Paper

Luminescence band evolution in Si implanted SiO₂ layer upon high temperature annealingLIU, B. X; LAN, A. D; BAI, X. D et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 356-359, issn 0254-0584Conference Paper

Progress, demands and prospects for advanced ion beam processingYAMADA, I.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 5-14, issn 0254-0584Conference Paper

Sputterring and smoothing of metal surface with energetic gas cluster beamsINSEPOV, Z; YAMADA, I; SOSNOWSKI, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 234-237, issn 0254-0584Conference Paper

Surface smoothing effects with reactive cluster ion beamsTOYODA, N; KITANI, H; HAGIWARA, N et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 106-110, issn 0254-0584Conference Paper

Angular distributions of the particles sputtered with Ar cluster ionsTOYODA, N; KITANI, H; HAGIWARA, N et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 262-265, issn 0254-0584Conference Paper

Development of an ion source for the low energy ion implantationSAKAI, S; TAKAHASHI, M; TANJYO, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 44-48, issn 0254-0584Conference Paper

Highly corrosion resistant stainless steel with Si implanted/deposited phaseNISHIMURA, R; YAMAKAWA, K; ISHIGA, J et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 289-292, issn 0254-0584Conference Paper

Interfacial reactions of Ni on Si_0.76Ge_0.24 and Si by pulsed laser annealingLUO, J.-S; LIN, W.-T; CHANG, C. Y et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 160-163, issn 0254-0584Conference Paper